CET3904E NPN
CET3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
SOT-883L CASE
♦
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CET3904E
and CET3906E Low VCE(SAT) NPN and PNP
transistors, respectively, are designed for applications
where ultra small size and power dissipation are
the prime requirements. Packaged in an SOT-883L
surface mount package, these components provide
performance characteristics suitable for the most
demanding size constrained applications.
MARKING CODES: CET3904E: C
CET3906E: D
FEATURES:
• Device is Halogen Free by design
• 250mW power dissipation
• Low VCE(SAT) 0.1V TYP @ 50mA
• Small, TLP™ 1x0.4mm, SOT-883L leadless,
low profile, surface mount package
APPLICATIONS:
• DC-DC converters
• Battery powered devices including cell phones
and digital cameras
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
♦
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60
V
40
V
VEBO
IC
6.0
V
200
mA
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
PD
PD
TJ, Tstg
250
mW
430
-65 to +150
mW
°C
Thermal Resistance (Note 1)
ΘJA
500
°C/W
Thermal Resistance (Note 2)
ΘJA
290
°C/W
Power Dissipation (Note 2)
Operating and Storage Junction Temperature
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♦
♦
♦
♦
UNITS
VCBO
VCEO
ELECTRICAL
SYMBOL
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
CHARACTERISTICS: (TA=25°C)
TEST CONDITIONS
VCE=30V, VEB=3.0V
IC=10µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
MIN
60
40
6.0
0.65
NPN
TYP
PNP
TYP
115
60
7.5
0.057
0.100
0.75
0.85
90
55
7.9
0.050
0.100
0.75
0.85
MAX
50
0.100
0.200
0.85
0.95
UNITS
nA
V
V
V
V
V
V
V
Enhanced specification
Notes: 1) FR-4 epoxy PC board, standard mounting conditions.
2) FR-4 epoxy PC board with collector mounting pad area of 1 cm2.
R3 (25-September 2018)
CET3904E NPN
CET3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
♦
♦
♦
♦
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C)
SYMBOL
TEST CONDITIONS
hFE
VCE=1.0V, IC=0.1mA
hFE
VCE=1.0V, IC=1.0mA
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=50mA
hFE
VCE=1.0V, IC=100mA
fT
VCE=20V, IC=10mA, f=100MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
hie
VCE=10V, IC=1.0mA, f=1.0kHz
hre
VCE=10V, IC=1.0mA, f=1.0kHz
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
NF
VCE=5.0V, IC=100μA, RS=1.0KΩ,
f=10Hz to 15.7kHz
td
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
tr
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
MIN
90
100
100
70
30
300
NPN
TYP
240
235
215
110
50
PNP
TYP
130
150
150
120
55
MAX
300
4.0
12
12
10
400
60
4.0
1.0
0.1
100
1.0
UNITS
35
35
200
50
MHz
pF
pF
kΩ
x10-4
μS
dB
ns
ns
ns
ns
Enhanced specification
SOT-883L CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODES:
CET3904E: C
CET3906E: D
R3 (25-September 2018)
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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